p-type oxide, composition for producing p-type oxide, method for producing p-type oxide, semiconduct

专利摘要:
TYPE P OXIDE, COMPOSITION FOR PRODUCING TYPE P OXIDE, METHOD FOR PRODUCING TYPE P OXIDE, SEMICONDUCTOR DEVICE, DISPLAY DEVICE, IMAGE DISPLAY APPARATUS, AND SYSTEM. An oxide of type p that is amorphous and is represented by the following composition formula: xAOyCu2O where x denotes a proportion per mole of AO and y denotes a proportion per mole of Cu2O and y and y satisfy the following expressions: 0 (less equal) x 100 ex + y = 100, and A is either Mg, Ca, Sr and Ba, or a mixture containing at least one selected from the group consisting of Mg, Ca, Sr and Ba.
公开号:BR112013025260B1
申请号:R112013025260-0
申请日:2012-03-28
公开日:2021-07-06
发明作者:Yukiko Abe；Naoyuki Ueda；Yuki Nakamura；Shinji Matsumoto；Yuji Sone；Mikiko Takada；Ryoichi Saotomo
申请人:Ricoh Company, Ltd.；
IPC主号:

专利说明:

Technical Field
[0001] The present invention relates to a p-type oxide, a p-type oxide production composition, a method for producing the p-type oxide, a semiconductor device, a display device, an image display apparatus , and a system. The present invention even more specifically relates to a p-type oxide exhibiting p-type electrical conductivity, a p-type oxide producing composition for producing the p-type oxide, a method for producing the p-type oxide, a semiconductor device using p-type oxide in an active layer, a display device having the semiconductor device, an image display apparatus using the display device, and a system including the image display apparatus. Background of the technique
[0002] A development of InGaZnO4 (a-IGZO) thin film transistors (TFT) which, in an amorphous state, have greater mobility than a-Si has promoted research and development in an effort to make oxide semiconductors that can be practiced all over the world. However, almost all of these oxide semiconductors have been an n-type oxide semiconductor in which electrons serve as a carrier.
[0003] If a p-type oxide semiconductor whose properties are comparable with those of the n-type oxide semiconductor becomes available, the p-type oxide semiconductor can be combined with the n-type oxide semiconductor to form a pn junction that results in, for example, a diode, an optical sensor, a solar cell, an LED, and a bipolar transistor.
[0004] The oxide semiconductor can be made of a wide band semiconductor, which allows a device including the semiconductor to be transparent.
[0005] In an active matrix organic EL display, a basic drive circuit is a 2T1C circuit as shown in FIG. 7. In this case, a drive transistor (field effect transistor 20) which is an n-type transistor results in a so-called source-following connection. Thus, a time-dependent change (especially voltage rise) of organic EL device properties causes one operating point of the driving transistor to move to another operating point at different gate voltage, which shortens one half -life of the exhibitor. This is the reason why an AM-OLED (active matrix organic EL display) was not feasible yet which uses a-IGZO TFT having high mobility as a background, and at present, an LTPS-TFT type p (low temperature polysilicon thin-film transistor) is employed alone. As a result, a high-performance p-type oxide semiconductor is again strongly desired.
[0006] It has been known from the 1950s that a Cu2O crystal exhibits p-type electrical conductivity (see, for example, NPL 1). This crystal is based on an O-Cu-O halter structure, and in the structure a hybrid Cu 3d and O 2p orbital forms the top of a valence band. A non-stoichiometry reaction with excess oxygen results in a hole in the anterior valence band, which leads to p-type conductivity.
[0007] Examples of the crystal based on the halter structure include a delafossite crystal represented by the following formula: CuMo2 (where M = Al, Ga, or In) and a crystal of SrCu2O2. Oxides thereof must have high crystallinity in order to exhibit electrical conductivity of the p-type. Thus, it is only CuAlO2, CuInO2, and SrCu2O2 that are currently reported to exhibit p-type electrical conductivity (see, for example, NPLs 2 to 4).
[0008] One reason why it is difficult to exhibit p-type electrical conductivity is that the valence of Cu and the amount of oxygen cannot be easily controlled. A crystal phase that contains Cu2+ such as CuO, SrCuO2, and SrCu2O3 is usually contaminated in an effort to form a single-phase film composed of an oxide that contains Cu+ which has excellent crystallinity. Such contaminated film cannot exhibit excellent p-type electrical conductivity and cannot be easily controlled in properties. This means that properties such as carrier concentration and carrier mobility cannot be optimized when these p-type oxide materials are used for an active layer in a semiconductor device.
[0009] In addition, a delafosite oxide containing monovalent Cu or Ag has been proposed (see PTL 1). However, the technology proposed above requires a high temperature heat treatment of 500°C or more, which is not practical.
[00010] A p-type electrically conductive thin film containing crystalline SrCu2O2 has been proposed (see PTL 2). In the technology proposed above, the thin film can be formed at a relatively low temperature of 300°C. However, the thin film can only exhibit electrical conductivity of up to 4.8 x 10-2 Scm-1, which is insufficient. Electrical conductivity cannot be properly controlled either.
[00011] That is, the technologies proposed above are neither capable of producing the p-type oxide in a practical way nor capable of resulting in the p-type oxide material that exhibits appropriately controlled and sufficient electrical conductivity.
[00012] A TFT has been proposed using, as an active layer, an oxide of type p material that has a crystal structure of delafosite containing monovalent Cu or Ag (see PTL 3).
[00013] However, the technology proposed above has not disclosed sufficient information regarding, for example, the material properties of an active layer, a method to produce the active layer, and transistor properties.
[00014] A TFT has also been proposed using, as an active layer, a Cu2O crystal (see NPLs 5 and 6). However, the technologies proposed above may not reach a particularly useful level with respect, for example, to electron field effect mobility and the on-off ratio of the TFT as the active layer cannot be sufficiently controlled in the properties .
[00015] That is, the technologies proposed above that neither are able to easily control various properties such as the concentration of p-type oxide carrier material nor reach suitable properties to be used in a device.
[00016] In conclusion, no practical or useful p-type oxide material has been discovered.
[00017] Appropriately, there is still a need to provide a p-type oxide whose properties are comparable to those of n-type oxides, a p-type oxide production composition for producing p-type oxide, a method for producing p-type oxide, a semiconductor device using p-type oxide in an active layer, a display device having the semiconductor device, an image display apparatus using the display device, and a system including the display device. image display. Quote List Patent Literature
[00018] PTL 1: Open-ended Japanese Patent Application (JP-A) No. 11-278834
[00019] PTL 2- JP-A No. 2000-150861
[00020] PTL 3: JP-A No. 2005-183984
[00021] Non-patent Literature
[00022] NPL 1: J. Bloem, Discussion of some optical and electrical properties of Cu2O, Philips Research Reports, VOL. 13, 1958, pp. 167-193
[00023] NPL 2-H. Kawazoe, et al., P-type electrical conduction in transparent thin films of CuAlO2, Nature, VOL. 389, 1997, pp. 939-942
[00024] NPL 3: H. Yanagi, et al., Bipolarity in electrical conduction of transparent oxide semiconductor CuInO2 with delafossite structure, Applied Physics Letters, VOL. 78, 2001, pp. 1583-1585
[00025] NPL 4: A. Kudo, three others, SrCu2O2: A p-type conductive oxide with wide band gap, Applied Physics Letters, VOL. 73, 1998, pp. 220-222
[00026] NPL 5: E. Fortunato, eight others, Thin-film transistors based on p-type Cu2O thin films produced at room temperature, Applied Physics Letters, VOL. 96, 2010, pp. 192102
[00027] NPL 6: K. Matsuzaki, five others, Epitaxial growth of high mobility Cu2O thin films and application to p-channel thin film transistor, Applied Physics Letters, VOL. 93, 2008, pp. 202107 Invention Summary Technical problem
[00028] The present invention aims to solve the existing problems above and achieve the following objective. Specifically, an aim of the present invention is to provide a new p-type oxide capable of exhibiting excellent property, which is sufficient electrical conductivity, being produced at relatively low temperature and under practical conditions, and being controlled in electrical conductivity by adjusting its ratio of composition; a p-type oxide producing composition for producing the p-type oxide; a method for producing the p-type oxide; a semiconductor device using p-type oxide in an active layer; a display device having the semiconductor device, an image display apparatus using the display device; and a system including the image display apparatus. Solution to Problem
[00029] Means to solve the above problems are as follows.
[00030] <1> An oxide of type p,
[00031] where the p-type oxide is amorphous and is represented by the following composition formula: xAO.yCu2O where x denotes a proportion per mole of AO and y denotes a proportion per mole of Cu2O and y and y satisfy the following expressions: 0 < x < 100 x + y = 100, and A is either Mg, Ca, Sr and Ba, or a mixture containing at least one selected from the group consisting of Mg, Ca, Sr and Ba.
[00032] <2> A p-type oxide producing composition including:
[00033] a solvent;
[00034] a compound containing Cu; and
[00035] a compound containing at least one selected from the group consisting of Mg, Ca, Sr and Ba,
[00036] wherein the composition for producing the p-type oxide is designed to produce the p-type oxide according to <1>.
[00037] <3> A method for producing the p-type oxide according to <1> including:
[00038] apply a composition to a support; and
[00039] heat the composition after application,
[00040] wherein the composition includes a solvent, a compound containing Cu, and a compound containing at least one selected from the group consisting of Mg, Ca, Sr and Ba.
[00041] <4> A semiconductor device including:
[00042] an active layer,
[00043] wherein the active layer includes the p-type oxide according to <1>.
[00044] <5> The semiconductor device according to <4>, additionally including:
[00045] a first electrode; and
[00046] a second electrode,
[00047] in which the semiconductor device is a diode where the active layer is formed between the first electrode and the second electrode.
[00048] <6> The semiconductor device according to <4>, additionally including:
[00049] a gate electrode configured to apply gate voltage;
[00050] a supply electrode and a drain electrode which are configured to extract electrical current; and
[00051] a door insulation layer,
[00052] in which the semiconductor device is a field effect transistor where the active layer is formed between the supply electrode and the drain electrode, and the gate insulation layer is formed between the gate electrode and the active layer .
[00053] <7> A display device including:
[00054] a light control device configured to control light output based on a trigger signal; and
[00055] a drive circuit containing the semiconductor device according to <4> and configured to drive the light control device.
[00056] <8> The display device according to <7>, wherein the light control device includes an organic electroluminescence device or an electrochromic device.
[00057] <9> The display device according to <7>, wherein the light control device includes a liquid crystal device, an electrophoretic device or an electrowetting device.
[00058] <10> An image display device including:
[00059] a plurality of display devices according to <7> which are arranged in a matrix shape and each contain a field effect transistor;
[00060] a plurality of wires configured to individually apply gate voltage and signal voltage to the field effect transistor of the display devices; and a display control apparatus configured to individually control the gate voltage and the signal voltage in the field effect transistor across the wires based on the image data,
[00061] wherein the image display apparatus is configured to display an image based on the image data.
[00062] <11> A system including:
[00063] the image display apparatus according to <10>; and
[00064] an image data generating apparatus configured to generate image data based on the image information to be displayed, and output the image data to the image display apparatus. Advantage Effects of the Invention
[00065] The present invention can solve the above problems and provides a new p-type oxide capable of exhibiting excellent property, which is sufficient electrical conductivity, being produced at relatively low temperature and under practical conditions, and being controlled in electrical conductivity through adjusting its composition ratio; a p-type oxide producing composition for producing the p-type oxide; a method for producing the p-type oxide; a semiconductor device using p-type oxide in an active layer; a display device having the semiconductor device, an image display apparatus using the display device; and a system including the image display apparatus. Brief Description of Drawings
[00066] FIG. 1 is a schematic structural view of an exemplary diode.
[00067] FIG. 2 is a schematic structural view of an example field effect transistor of a top/bottom contact gate type.
[00068] FIG. 3 is a schematic structural view of an example field effect transistor of a bottom/bottom contact gate type.
[00069] FIG. 4 is a schematic structural view of an example field effect transistor of a top/top contact gate type.
[00070] FIG. 5 is a schematic structural view of an example field effect transistor of a top/bottom contact gate type.
[00071] FIG. 6 is an explanatory view of an image display apparatus.
[00072] FIG. 7 is an explanatory view of an example display device of the present invention.
[00073] FIG. 8 is a schematic structural view of an example of a position relationship between an organic EL device and a field effect transistor in a display device, where the arrow indicates the direction in which light is emitted.
[00074] FIG. 9 is a schematic structural view of another example of a position relationship between an organic EL device and a field effect transistor in a display device, where the arrow indicates the direction in which light is emitted.
[00075] FIG. 10 is a schematic structural view of an example organic EL device, where the arrow indicates the direction in which light is emitted.
[00076] FIG. 11 is an explanatory view of a display control apparatus.
[00077] FIG. 12 is an explanatory view of a liquid crystal display, where Y0 ... Ym-1 are data lines and X0 ... Xn-1 are scan lines.
[00078] FIG. 13 is an explanatory view of a display device in FIG. 12.
[00079] FIG. 14 illustrates the result of X-ray diffraction analysis of p-type oxide according to Example 1.
[00080] FIG. 15 illustrates the result of X-ray diffraction analysis of p-type oxide according to Example 3.
[00081] FIG. 16 illustrates the result of X-ray diffraction analysis of p-type oxide according to Example 7.
[00082] FIG. 17 illustrates the result of X-ray diffraction analysis of p-type oxide according to Example 9.
[00083] FIG. 18 illustrates the result of X-ray diffraction analysis of the p-type oxide according to Example 12.
[00084] FIG. 19 illustrates the result of X-ray diffraction analysis of p-type oxide according to Example 14.
[00085] FIG. 20 illustrates the result of X-ray diffraction analysis of p-type oxide according to Example 15.
[00086] FIG. 21 illustrates the result of X-ray diffraction analysis of p-type oxide according to Example 18.
[00087] FIG. 22 illustrates the result of X-ray diffraction analysis of p-type oxide according to Example 24.
[00088] FIG. 23 illustrates the result of X-ray diffraction analysis of the p-type oxide according to Example 27.
[00089] FIG. 24 illustrates the result of X-ray diffraction analysis of p-type oxide according to Example 30.
[00090] FIG. 25 illustrates the result of X-ray diffraction analysis of p-type oxide according to Example 32.
[00091] FIG. 26 illustrates the result of X-ray diffraction analysis of p-type oxide according to Example 35.
[00092] FIG. 27 illustrates the result of X-ray diffraction analysis of the p-type oxide according to Example 38.
[00093] FIG. 28 illustrates the result of X-ray diffraction analysis of the p-type oxide according to Example 40.
[00094] FIG. 29 illustrates the result of X-ray diffraction analysis of the p-type oxide according to Example 43.
[00095] FIG. 30 illustrates the result of X-ray diffraction analysis of the p-type oxide according to Example 45.
[00096] FIG. 31 illustrates the volumetric resistivity of the p-type oxides (xMgO.yCu2O) according to Examples 1 to 11.
[00097] FIG. 32 illustrates the volumetric resistivity of the p-type oxides (xCaO.yCu2O) according to Examples 12 to 22.
[00098] FIG. 33 illustrates the volumetric resistivity of the p-type oxides (xSrO.yCu2O) according to Examples 23 to 34.
[00099] FIG. 34 illustrates the volumetric resistivity of the p-type oxides (xBaO.yCu2O) according to Examples 35 to 44.
[000100] FIG. 35 illustrates the TV characteristic of the diode produced in Example 50.
[000101] FIG. 36 is the microphotograph of the channel portion of the field effect transistor produced in Example 52. Description of Modalities
[000102] (P-type oxide, p-type oxide production composition, and method for producing p-type oxide) <p-type oxide>
[000103] A p-type oxide of the present invention is amorphous and is represented by the composition formula: xAO.yCu2O where x denotes a ratio per mole of AO and y denotes a ratio per mole of Cu2O and satisfy the following expressions: 0 < x < 100 and x + y = 100, and A is either Mg, Ca, Sr and Ba, or a mixture containing at least one selected from the group consisting of Mg, Ca, Sr and Ba.
[000104] The p-type oxide can exhibit p-type electrical conductivity in which holes serve as a carrier despite being amorphous. In addition, p-type oxide can be obtained which has suitable properties depending on the intended purpose by continuously varying its composition ratio (x, y) to control enough electrical conductivity of the oxide, which is due to its amorphous structure.
[000105] Conventionally, it is believed that a monovalent Cu oxide (or Ag) of which the valence band is composed of a hybrid orbital of Cu 3d and O 2p has a strong orbital anisotropy, and thus must be crystalline in order to display p-type conductivity. An n-type oxide semiconductor is very different from monovalent Cu (or Ag) oxide at this point in that an n-type oxide conduction band is composed of a heavy metal isotropic s orbital. However, the inventors found that Cu oxide can exhibit p-type conductivity despite being amorphous. In the composition range, only SrCu2O2 and BaCu2O2 were reported as crystal phase. These crystals are difficult to control in conductivity.
[000106] That is, the p-type oxide of the present invention can vary greatly in composition, which is different from the p-type oxide containing crystalline Cu. In particular, it is very advantageous that the state density of a hybrid dp band and electrical conductivity can be well controlled because of the chemical species and amount of A (Mg, Ca, Sr, and/or Ba) which is a counter cation of Cu can be freely selected.
[000107] Additionally, p-type oxides containing conventional Cu are crystalline, while the p-type oxide of the present invention is amorphous. Therefore, the p-type oxide of the present invention is advantageous in that inequalities in properties due to uneven crystallinity will not occur, and whereby a uniform film can be obtained therefrom.
[000108] Note that the p-type oxide consists essentially of an amorphous oxide represented by the following composition formula: xAO.yCu2O where x denotes a proportion per mole of AO and y denotes a proportion per mole of Cu2O and satisfy the following expressions: 0 < x < 100 and x + y = 100, but only a small amount of fine crystal particles can be present in the p-type oxide, since they have almost no effect on semiconductor properties. The phrase "only a small amount" means as used here the amount which does not cause a percolation of the fine crystal particles, which is about 15% by volume or less.
[000109] The A includes Mg, Ca, Sr and/or Ba. That is, A can be any one of Mg, Ca, Sr and Ba, or a mixture of any two to four of Mg, Ca, Sr and Ba.
[000110] The A in the p-type oxide can be doped with, for example, Rb or Cs.
[000111] The electrical property of the p-type oxide depends on the chemical species of A and the molar ratio of A to Cu (ie values of x and y). An oxide film of the present invention can be used for various semiconductor devices, but a property which semiconductors in devices require (ie, resistivity) in general varies depending on the type and property of the semiconductor devices. Appropriately, the chemical species of A and the molar ratio of A to Cu (ie values of x and y) can be appropriately selected depending on the intended purpose, provided that when the volumetric resistivity film of the oxide is more than 108 Qcm, an ohmic contact cannot be easily formed by connecting with an electrode, which may not be practically preferred in some cases. So that the volumetric resistivity is 108 Qcm or less, in the case where the composition formula: AO.yCu2O is xMgO.yCu2O, x is preferably less than 80. In the case where the composition formula: xAO.yCu2O is xCaO. yCu2O, x is preferably less than 85. In the case where the composition formula: xAO.yCu2O is xSrO.yCu2O, x is preferably less than 85. In the case where the composition formula: xAO.yCu2O is xBaO.yCu2O, x is preferably less than 75.
[000112] The form of the p-type oxide is not particularly limited and can be selected appropriately depending on the intended purpose. For example, the p-type oxide can be film or bulk (particle).
[000113] The p-type oxide is useful as a p-type active layer for a semiconductor device such as a pn junction diode, a PIN photodiode, a field effect transistor, a light emitting device, and a transducer photoelectric.
[000114] A method for producing the p-type oxide is preferably a method for producing a p-type oxide of the present invention using a p-type oxide producing composition of the present invention described below.
[000115] Other methods for producing the p-type oxide are not particularly limited and may be appropriately selected depending on the intended purpose. Examples thereof include a spray method, a pulsed laser deposition (PLD) method, a CVD method, and an ALD method. <P-type oxide production composition >
[000116] The p-type oxide producing composition contains at least one solvent, a compound that contains Cu, and a compound that contains Mg, Ca, Sr and/or Ba; and, if necessary, additionally contains other components.
[000117] The p-type oxide producing composition is a composition used to produce the p-type oxide of the present invention. - Solvent -
[000118] The solvent is not particularly limited and can be selected appropriately depending on the intended purpose. Examples thereof include toluene, xylene, 2-ethyl hexanoic acid, acetylacetone, ethylene glycol, and 2-methoxy ethanol.
[000119] Solvents such as diethylene glycol and dimethylformamide can be used in order to impart desired properties such as viscoelasticity and dielectricity to the p-type oxide production composition.
[000120] These can be used alone or in combination.
[000121] The amount of solvent in the composition for producing the p-type oxide is not particularly limited and can be selected appropriately depending on the intended purpose. - Compound containing Cu -
[000122] Copper in the p-type oxide is monovalent, but Cu in the compound containing Cu is not limited to this. The compound containing Cu can be selected appropriately depending on the intended purpose. Examples thereof include organic copper carboxylates such as copper(II) neodecanoate; organic copper complexes such as copper (II) phthalocyanine and copper (II) phenylacetylide; copper alkoxides such as copper(II) diethoxide; and inorganic copper salts such as copper(II) sulfate and copper(I) acetate.
[000123] Among these, in the case where the p-type oxide producing composition is produced in non-polar solvents, organic copper carboxylates are preferable and copper(II) neodecanoate is more preferable in terms of solubility. In the case where the p-type oxide production composition is produced in polar solvents, inorganic copper salts are preferable and copper(II) sulfate is more preferable in terms of solubility.
[000124] The amount of the Cu-containing compound contained in the composition for producing the p-type oxide is not particularly limited and can be selected appropriately depending on the intended purpose. - Compound containing Mg, Ca, Sr and/or Ba -
[000125] The compound containing Mg, Ca, Sr and/or Ba is not particularly limited and can be selected appropriately depending on the intended purpose. Examples thereof include organic carboxylates, organic metal complexes, metal alkoxides, and inorganic salts that contain Mg, Ca, Sr and/or Ba.
[000126] Among these, in the case where the composition for producing the p-type oxide is produced in non-polar solvents, organic carboxylates are preferable; and magnesium 2-ethylhexanoate, barium 2-ethylhexanoate, strontium 2-ethylhexanoate, and barium 2-ethylhexanoate are more preferable in terms of solubility. In the case where the composition for producing the p-type oxide is produced in polar solvents, inorganic salts are preferable; and magnesium nitrate, calcium nitrate, strontium chloride, and barium chloride are more preferable in terms of solubility.
[000127] The p-type oxide producing composition of the present invention is suitable as a bulk solution used to produce the p-type oxide that exhibits excellent electrical conductivity. It is characterized by the fact that Cu in the p-type oxide is monovalent, but Cu in the Cu-containing compound contained in the composition for producing the p-type oxide is not limited thereto and is preferably divalent. When the Cu in the Cu-containing compound is divalent, the Cu in the composition for producing the p-type oxide is also divalent, a ratio of the number of Cu atoms to the number of oxygen atoms therefore is 1:1 in the composition for production of the p-type oxide. However, Cu in the p-type oxide (xAO.yCu2O) produced therefrom is monovalent, so a ratio of the number of Cu atoms to the number of oxygen atoms is 2:1 in the p-type oxide. The p-type oxide production composition has excess oxygen atoms in relation to Cu atoms in the production of p-type oxide. Such p-type oxide producing composition results in the p-type oxide having large amount of oxygen to thereby suppress carrier compensation due to an oxygen effect. Therefore, p-type oxide with high concentration of holes and exhibits excellent p-type electrical conductivity can be obtained.
[000128] In the composition for producing the p-type oxide, the composition of metal elements and the solvent mixing ratio can be quite varied, and thus can be appropriately adjusted depending on the methods for producing the p-type oxide and the intended uses described below. - Method to produce p-type oxide >
[000129] A method for producing the p-type oxide of the present invention includes at least an application step and a heat treatment step; and, if necessary, additionally includes other steps. - Application step -
[000130] The application step is not particularly limited and can be selected appropriately depending on the intended purpose, as long as it is a step to apply a composition to a support.
[000131] The composition is the composition for producing the p-type oxide of the present invention.
[000132] Support is not particularly limited and can be selected appropriately depending on the intended purpose. Example of the same includes a glass base.
[000133] A method for applying the composition is not particularly limited and may be appropriately selected depending on the intended purpose. For example, existing methods can be used such as a spin coating method, an ink jet printing method, a slot coating method, a nozzle printing method, an gravure printing method, and an engraving method. of microcontact printing. Among these, the spin coating method is preferable in the case where a film having a uniform thickness is desired to be easily produced over a large area. Using appropriate printing conditions and printing methods such as the inkjet printing method and the microcontact printing method allows the composition to be printed in a desired shape without requiring a subsequent patterning step. - Heat treatment step -
[000134] The heat treatment step is not particularly limited and can be selected appropriately depending on the intended purpose, since it is a step of performing heat treatment after the application step, and thus being able to dry the solvent contained in the composition, decomposing the Cu-containing compound, decomposing the Mg, Ca, Sr and/or Ba-containing compound, and producing the p-type oxide.
[000135] In the heat treatment step, drying of the solvent contained in the composition (hereafter may be referred to as "drying step") is preferably carried out at a different temperature from the decomposition of the compound containing Cu, decomposing the compound that contains Mg, Ca, Sr and/or Ba, and produces the p-type oxide (hereafter it may be referred to as the "decomposition and production step"). That is, it is preferable that the temperature is raised after drying the solvent, and then the compound containing Cu is decomposed, the compound containing Mg, Ca, Sr and/or Ba is decomposed, and the p-type oxide is produced .
[000136] The temperature of the drying step is not particularly limited and can be selected appropriately depending on the solvent contained. It is, for example, 80°C to 180°C. A vacuum oven can effectively be used to lower the temperature in the drying step.
[000137] The period of the drying step is not particularly limited and can be selected appropriately depending on the intended purpose. It is, for example, 10 min to 1 hour.
[000138] The temperature of the decomposition and production step is not particularly limited and can be selected appropriately depending on the intended purpose. It is, for example, 200°C to 400°C.
[000139] The period of the decomposition and production step is not particularly limited and can be selected appropriately depending on the intended purpose. It is, for example, 1 hour to 5 hours.
[000140] In the heat treatment step, the decomposition and production step can be performed simultaneously or divided into multiple steps.
[000141] A method for performing the heat treatment step is not particularly limited and can be selected appropriately depending on the intended purpose. For example, the support can be heated.
[000142] An atmosphere under which the heat treatment step is carried out is not particularly limited and can be selected appropriately depending on the intended purpose, but is preferably oxygen atmosphere.
[000143] Performing heat treatment under the oxygen atmosphere allows a decomposition product to be rapidly discharged from a system and the resulting p-type oxide oxygen defects to be diminished.
[000144] Through the heat treatment step, the exposure of the composition that has been dried to ultraviolet radiation having a wavelength of 400 nm or less is effective to promote reactions in the decomposition and production step. Exposure to ultraviolet radiation having a wavelength of 400 nm or less allows the p-type oxide to be produced more efficiently as ultraviolet radiation breaks a chemical bond between organic matter contained in the composition and thereby decomposing the organic matter .
[000145] Ultraviolet radiation having a wavelength of 400 nm or less is not particularly limited and can be selected appropriately depending on the intended purpose. Examples thereof include ultraviolet radiation having a wavelength of 222 nm irradiated with an excimer lamp.
[000146] Instead of or in addition to ultraviolet radiation, an ozone treatment preferably can be performed. An oxide production is promoted through the treatment, with ozone, of the composition that has been dried.
[000147] In the method for producing the p-type oxide of the present invention, the p-type oxide is produced through a process in solution.
[000148] Therefore, the p-type oxide can be produced more easily, in large quantities, and at a lower cost than the p-type oxide produced through a vacuum process.
[000149] In addition, the method for producing the p-type oxide of the present invention can produce the p-type oxide which exhibits excellent p-type electrical conductivity. In the method for producing the p-type oxide of the present invention, the composition used therefore preferably contains the Cu-containing compound in which the Cu is divalent. In this case, Cu in the composition is divalent, a ratio of the number of Cu atoms to the number of oxygen atoms therefore is 1:1 in the composition.
[000150] However, Cu in the p-type oxide produced from it is monovalent, so a ratio of the number of Cu atoms to the number of oxygen atoms is 2:1 in the p-type oxide. The composition has an excess of oxygen atoms in relation to Cu atoms in the production of the p-type oxide. Such a composition results in the p-type oxide which has a large amount of oxygen to thus suppress the production of electrons due to an oxygen effect. Therefore, p-type oxide with high concentration of holes and exhibits excellent p-type electrical conductivity can be obtained. (Semiconductor device)
[000151] A semiconductor device of the present invention includes at least one active layer, and, if necessary, additionally includes other members. < Active layer >
[000152] The active layer is not particularly limited and can be selected appropriately depending on the intended purpose, as long as it contains the p-type oxide of the present invention.
[000153] As mentioned above, the p-type oxide of the present invention is adequately contained in the active layer of the semiconductor device as it can achieve desired properties depending on the intended purpose by adjusting its composition. That is, when the p-type oxide having optimized properties is contained in the active layer, the semiconductor device is improved in corresponding properties.
[000154] The shape, structure and size of the active layer are not particularly limited and can be selected appropriately depending on the intended purpose.
[000155] The semiconductor device includes a diode, a field-effect transistor, a light-emitting device, and a photoelectric transducer. < Diode >
[000156] The diode is not particularly limited and can be selected appropriately depending on the intended purpose. For example, a diode including a first electrode, a second electrode, and an active layer formed between the first electrode and the second electrode can be used.
[000157] Examples of the diode include a p-n junction diode and a PIN photodiode.
[000158] There are many known materials having high transmittance for visible light among n-type oxide semiconductors. The p-type oxide of the present invention can also transmit visible light due to its wide bandwidth. Thus, the p-type oxide of the present invention can result in a transparent diode. - p-n junction diode -
[000159] The p-n junction diode includes at least one active layer, and, if necessary, additionally includes other members such as an anode (positive electrode) and a cathode (negative electrode). - - Active layer -
[000160] The active layer includes at least a p-type semiconductor layer and an n-type semiconductor layer, and, if necessary, additionally includes other members.
[000161] The p-type semiconductor layer is in contact with the n-type semiconductor layer. - -- P-type semiconductor layer --
[000162] The p-type semiconductor layer is not particularly limited and can be selected appropriately depending on the intended purpose, as long as it contains the p-type oxide of the present invention.
[000163] The composition and production conditions of the p-type oxide are preferably selected so that the necessary carrier concentration and carrier mobility to serve as the active layer can be obtained.
[000164] The average thickness of the p-type semiconductor layer is not particularly limited and can be selected appropriately depending on the intended purpose, but is preferably 50 nm to 2000 nm. - -- Type n semiconductor layer --
[000165] The material of the n-type semiconductor layer is not particularly limited and can be selected appropriately depending on the intended purpose, but is preferably a transparent n-type oxide semiconductor.
[000166] The transparent n-type oxide semiconductor is not particularly limited and can be selected appropriately depending on the intended purpose. Examples thereof include ZnO and IGZO (In-Ga-Zn-O).
[000167] In the case where the transparent n-type oxide semiconductor is used, the p-type oxide of the present invention can also transmit visible light due to its wide band band, and thus a transparent active layer can be obtained.
[000168] A method for producing the n-type semiconductor layer is not particularly limited and can be selected appropriately depending on the intended purpose. Examples thereof include a vacuum process such as a spray method, a pulsed laser deposition (PLD) method, a CVD method, and an ALD method, a dip coating method, a printing method such as an inkjet printing method and a nano-printing method.
[000169] The average thickness of the n-type semiconductor layer is not particularly limited and can be selected appropriately depending on the intended purpose, but is preferably 50 nm to 2000 nm.
[000170] When the p-type semiconductor layer and the n-type semiconductor layer are both composed of crystalline material, the following failure tends to occur: good crystals cannot be obtained due to an incompatibility of crystal lattices by laminating the layers of above, and thus a semiconductor device that has excellent properties cannot be achieved. In order to avoid failure, materials between which crystal lattices are matched must be selected, which limits the type of materials used.
[000171] On the other hand, using the p-type oxide of the present invention for the p-type semiconductor layer avoids the above failure even though the n-type semiconductor layer is crystalline. Appropriately, a good p-n junction interface can be formed. The p-type oxide of the present invention allows a wide range of n-type semiconductor materials to be used in the diode to thereby achieve excellent device properties. — Anode (positive electrode) -
[000172] The anode is in contact with the p-type semiconductor layer.
[000173] Anode material is not particularly limited and can be selected appropriately depending on the intended purpose. Examples thereof include metals such as Mo, Al, Au, Ag, and Cu, and alloys thereof; transparent electrical conductive oxides such as ITO and ATO; organic electrical conductors such as polyethylenedioxythiophene (PEDOT) and polyaniline (PANI).
[000174] The shape, structure and size of the anode are not particularly limited and can be selected appropriately depending on the intended purpose.
[000175] The anode is provided to be in contact with the p-type semiconductor layer, and an ohmic contact is preferably formed between them.
[000176] A method for producing the anode is not particularly limited and may be appropriately selected depending on the intended purpose.
[000177] Examples thereof include (i) a method in which a film is formed with, for example, a spray method or a dip coating method followed by patterning the film with a photolithography method; and (ii) a method in which a film having a desired shape is directly formed with printing methods such as an ink jet printing method, a nano-printing method, and an gravure printing method. — Cathode (negative electrode) -
[000178] The cathode material is not particularly limited and can be selected appropriately depending on the intended purpose. For example, the material of the cathode can be the same as that mentioned for that of the anode.
[000179] The shape, structure and size of the cathode are not particularly limited and can be selected appropriately depending on the intended purpose.
[000180] The cathode is provided to be in contact with the n-type semiconductor layer, and an ohmic contact is preferably formed between them.
[000181] A method for producing the cathode is not particularly limited and may be appropriately selected depending on the intended purpose. For example, the method can be the same as the one mentioned for that of the anode. -- Method for producing diode junction
[000182] An exemplary method for producing the p-n junction diode shown in FIG. 1 will be explained now.
[000183] First, a cathode 2 is deposited on a base 1.
[000184] The shape, structure and size of the base are not particularly limited and can be selected appropriately depending on the intended purpose.
[000185] The base material is not particularly limited and can be selected appropriately depending on the intended purpose. Examples of the base include a glass base and a plastic base.
[000186] The glass base is not particularly limited and can be selected appropriately depending on the intended purpose. Examples thereof include an alkali-free glass base and a silica glass base.
[000187] The plastic base is not particularly limited and can be selected appropriately depending on the intended purpose. Examples thereof include a polycarbonate (PC) base, a polyimide (PI) base, a polyethylene terephthalate (PET) base and a polyethylene naphthalate (PEN) base.
[000188] Notably, the base is preferably pretreated by washing using oxygen plasma, UV ozone and UV irradiation from the viewpoints of cleaning the surface thereof and improving the surface tackiness.
[000189] Then, an n-type 3 semiconductor layer is deposited on cathode 2.
[000190] Then, a p-type semiconductor layer 4 is deposited on the n-type semiconductor layer 3.
[000191] Then, an anode 5 is deposited on the p-type semiconductor layer 4.
[000192] As described above, the p-n 6 junction diode is produced. - Field Effect Transistor >
[000193] A field effect transistor includes at least a gate electrode, a source electrode, a drain electrode, an active layer and a gate insulation layer; and, if necessary, additionally include other members. - Door electrode -
[000194] The gate electrode is not particularly limited and can be selected appropriately depending on the intended purpose, as long as it is an electrode to apply gate voltage.
[000195] The gate electrode material is not particularly limited and can be selected appropriately depending on the intended purpose.
[000196] Examples thereof include metals such as Mo, Al, Au, Ag, and Cu, and alloys thereof; transparent electrical conductive oxides such as ITO and ATO; organic electrical conductors such as polyethylenedioxythiophene (PEDOT) and polyaniline (PANI).
[000197] A method for producing the gate electrode is not particularly limited and may be appropriately selected depending on the intended purpose. Examples thereof include (i) a method in which a film is formed with, for example, a spray method or a dip coating method followed by patterning the film with a photolithography method; and (ii) a method in which a film having a desired shape is directly formed with printing methods such as an ink jet printing method, a nano-printing method, and an gravure printing method.
[000198] The average thickness of the gate electrode is not particularly limited and can be selected appropriately depending on the intended purpose. It is preferably 20 nm to 1 µm, more preferably 50 nm to 300 nm. - Supply electrode and drain electrode -
[000199] The supply electrode or the drain electrode is not particularly limited and can be selected appropriately depending on the intended purpose, since it is an electrode to extract electric current from the field effect transistor.
[000200] The material of the supply electrode or drain electrode is not particularly limited and can be selected appropriately depending on the intended purpose. Examples of these include materials which are described above for the gate electrode.
[000201] High contact resistance between the active layer and the source electrode, or the active layer and the drain electrode leads to poor properties in a transistor. In order to avoid this problem, materials that result in low contact resistance are preferably selected as those of the supply electrode and the drain electrode. Specifically, materials are preferably selected which have a greater working function than the p-type oxide of the present invention contained in the active layer.
[000202] A method for producing the supply electrode and the drain electrode is not particularly limited and can be appropriately selected depending on the intended purpose. For example, the method may be the same as the one mentioned for that of the gate electrode.
[000203] The average thickness of the supply electrode or the drain electrode is not particularly limited and can be selected appropriately depending on the intended purpose. It is preferably 20 nm to 1 µm, more preferably 50 nm to 300 nm. - Active layer -
[000204] The active layer contains the p-type oxide of the present invention.
[000205] The active layer is formed between the supply electrode and the drain electrode. The phrase "between the supply electrode and the drain electrode" as used here means a position in which the active layer can make the field effect transistor work in cooperation with the supply electrode and the drain electrode. As long as the active layer is in such a position, the position of the active layer is not particularly limited and can be selected appropriately depending on the intended purpose.
[000206] The composition and production conditions of the p-type oxide are preferably selected so that the necessary carrier concentration and carrier mobility to serve as the active layer can be obtained.
[000207] The average thickness of the active layer is not particularly limited and can be selected appropriately depending on the intended purpose. It is preferably 5 nm to 1 µm, more preferably 10 nm to 300 nm. - Door insulation layer -
[000208] The door insulation layer is not particularly limited and can be selected appropriately depending on the intended purpose, as long as it is an insulation layer formed between the door electrode and the active layer.
[000209] The material of the door insulation layer is not particularly limited and can be selected appropriately depending on the intended purpose. Examples of these include materials commonly used in commercial production such as SiO2 and SiNx; highly dielectric materials such as La2O3 and HfO2; and organic materials such as polyimide (PI) and fluororesins.
[000210] A method for producing the port insulation layer is not particularly limited and may be appropriately selected depending on the intended purpose. Examples thereof include a vacuum film forming method such as a spray method, a chemical vapor deposition (CVD) method, and an atomic layer deposition (ALD) method, a spin coating method, a matrix coating method, and a printing method such as an inkjet printing method.
[000211] The average thickness of the door insulation layer is not particularly limited and can be selected appropriately depending on the intended purpose. It is preferably 50 nm to 3 µm, more preferably 100 nm to 1 µm.
[000212] The structure of the field effect transistor is not particularly limited and can be selected appropriately depending on the intended purpose. Examples thereof include a structure of a top/bottom contact door type (FIG. 2), a structure of a bottom/bottom contact door type (FIG. 3), a structure of a type of top/top contact port (FIG. 4) and a structure of a top/bottom contact port type (FIG. 5).
[000213] In FIGs. 2 through 5, reference numeral 21 denotes a base, 22 denotes an active layer, 23 denotes a source electrode, 24 denotes a drain electrode, 25 denotes a gate insulation layer, and 26 denotes a gate electrode.
[000214] The field effect transistor is suitably used for the display device described below, but is not limited thereto. For example, the field effect transistor can be used for an IC card or an ID tag.
[000215] The field effect transistor uses the p-type oxide of the present invention in the active layer, which allows the p-type oxide composition to be well adjusted. This results in the active layer having preferable properties and thus improves transistor properties.
[000216] Additionally, the active layer is quite uniform due to being amorphous, which reduces the inequality of properties between individual transistors. - Method to produce field effect transistor -
[000217] An exemplary method for producing the field effect transistor will now be explained.
[000218] First, a gate electrode is deposited on a base.
[000219] The shape, structure and size of the base are not particularly limited and can be selected appropriately depending on the intended purpose.
[000220] The base material is not particularly limited and can be selected appropriately depending on the intended purpose. Examples of the base include a glass base and a plastic base.
[000221] The glass base is not particularly limited and can be selected appropriately depending on the intended purpose. Examples thereof include an alkali-free glass base and a silica glass base.
[000222] The plastic base is not particularly limited and can be selected appropriately depending on the intended purpose. Examples thereof include a polycarbonate (PC) base, a polyimide (PI) base, a polyethylene terephthalate (PET) base and a polyethylene naphthalate (PEN) base.
[000223] Notably, the base is preferably pretreated by washing using oxygen plasma, UV ozone and UV irradiation from the viewpoints of cleaning the surface thereof and improving the surface tackiness.
[000224] Then, the gate insulation layer is deposited on the gate electrode.
[000225] Then, the active layer containing the p-type oxide, which is a channel region, is deposited on the gate insulation layer.
[000226] Then, the supply electrode and the drain electrode are deposited on the gate insulation layer such that the supply electrode and the drain electrode are spaced apart by the active layer.
[000227] As above, the field effect transistor is produced. In this method, a top/bottom contact gate type field effect transistor is produced, for example, as shown in FIG. two.
[000228] The semiconductor device contains the p-type oxide of the present invention in the active layer. The p-type oxide can achieve desired properties depending on the intended purpose (electrical conductivity) by adjusting its composition. That is, when the p-type oxide having optimized properties is contained in the active layer, the semiconductor device can be improved in the corresponding properties.
[000229] The field effect transistor as the semiconductor device of the present invention can result in a TFT having excellent properties.
[000230] Additionally, the active layer is quite uniform due to being amorphous, which reduces the inequality of properties between individual transistors. (Display device)
[000231] The display device includes at least one light control device and a drive circuit that drives the light control device, and, if necessary, additionally includes other members. < Light Control Device >
[000232] The light control device is not particularly limited, since it is a device that controls the light output based on trigger signals, and can be selected appropriately depending on the intended purpose. Examples of the light control device include organic electroluminescence (EL) devices, electrochromic (EC) devices, liquid crystal devices, electrophoretic devices, and electrowetting devices. < Drive Circuit >
[000233] The drive circuit is not particularly limited, as long as it has a semiconductor device of the present invention, and can be selected appropriately depending on the intended purpose. < Other members >
[000234] The other members are not particularly limited and may be appropriately selected depending on the intended purpose.
[000235] The display device of the present invention has the semiconductor device (for example, the field effect transistor), which reduces the inequality between devices. In addition, the display device can operate a trigger transistor at constant gate voltage even though the display device is subjected to a time dependent change, which allows the device to be used for a long period. (Image Display Device)
[000236] An image display apparatus of the present invention includes at least a plurality of display devices, a plurality of wirings, and a display control apparatus, and, if necessary, further includes other members. < Display Device >
[000237] The display device is not particularly limited and can be selected appropriately depending on the intended purpose, provided it is the display device of the present invention arranged in a matrix shape. < Wiring >
[000238] The wiring is not particularly limited and can be selected appropriately depending on the intended purpose, provided it can individually apply gate voltage and image data signal to each field effect transistor in the display device. < Display Control Device >
[000239] The display control apparatus is not particularly limited and can be selected appropriately depending on the intended purpose, provided that it can individually control the gate voltage and the signal voltage in each field effect transistor through the plurality of wiring based on the image data. < Other Members >
[000240] Other members are not particularly limited and may be appropriately selected depending on the intended purpose.
[000241] The image display apparatus of the present invention can operate stably for a long period as it includes the display device of the present invention.
[000242] The image display apparatus of the present invention can be used as a display unit in portable information apparatus such as cell phones, portable music players, portable video players, electronic books and PDAs (Personal Digital Assistant), and imaging equipment such as still cameras and video cameras. It can also be used as a display unit for various information in mobile systems such as motor vehicles, airplanes, trains, and ships. In addition, it can be used as a display unit of various information in measuring apparatus, analyzing apparatus, medical devices, and advertising media. (System)
[000243] The system of the present invention includes at least the image display apparatus of the present invention and an image data generating apparatus.
[000244] The image data generating apparatus generates image data based on the image information to be displayed and outputs the image data to the image display apparatus.
[000245] The system of the present invention allows image data to be displayed with high definition as the system includes the image display apparatus.
[000246] The image display apparatus of the present invention will now be explained.
[000247] The image display apparatus of the present invention may be that described in paragraphs [0059] and [0060], and shown in FIGs. 2 and 3 of JP-A No. 2010-074148.
[000248] Hereinafter, an exemplary embodiment of the present invention will be explained with reference to the attached figures.
[000249] FIG. 6 is an explanatory view of a display in which display devices are arranged in a matrix shape.
[000250] The player has n scan lines (X0, X1, X2, X3, Xn-2, ..., Xn-1) which are arranged equally spaced along an X axis direction, m data lines (Y0, Y1, Y2, Y3, ..., Ym-1) which are arranged equally spaced along a Y-axis direction, in current supply lines (Y0i, Y1i, Y2i, Y3i, Ym-1i ) which are arranged equally spaced along a Y-axis direction, as illustrated in FIG. 6.
[000251] Appropriately, the display device 302 can be identified by the scan line number and the data line number.
[000252] FIG. 7 is a schematic structural view of an example display device of the present invention.
[000253] The display device includes an organic EL (electroluminescence) device 350 and a drive circuit 320 that allows the organic EL device 350 to emit light as shown, by way of example, in FIG. 7. That is, a 310 display is so called an active matrix organic electroluminescence display. Display 310 is an 81.28 cm (32 inch) color display. Notably, the size of the 310 display is not limited to this one.
[000254] A drive circuit 320 shown in FIG. 7 will be explained.
[000255] The drive circuit 320 includes two field effect transistors 10 and 20, and a capacitor 30.
[000256] A field effect transistor 10 is served as a switching device. A gate electrode G of the field effect transistor 10 is connected with a predetermined scan line, and a supply electrode S of the field effect transistor 10 is connected with a predetermined data line. A drain electrode D of field-effect transistor 10 is connected to a terminal of capacitor 30.
[000257] A field effect transistor 20 supplies current to the organic EL device 350. A gate electrode of the field effect transistor 20 is connected with the drain electrode D of the field effect transistor 10. A gate electrode of drain D of the field effect transistor 20 is connected with the positive electrode of the organic EL device 350. A supply electrode S of the field effect transistor 20 is connected with a predetermined supply line.
[000258] Capacitor 30 stores a state of field effect transistor 10, ie data. Another terminal of capacitor 30 is connected to a predetermined supply line.
[000259] Appropriately, when the field effect transistor 10 is switched, image data is stored in capacitor 30 through line Y2. Even after the field effect transistor 10 is turned off, the field effect transistor 20 which is held in the "ON" state allows the organic EL device 350 to be triggered.
[000260] FIG. 8 illustrates an exemplary position relationship between organic EL device 350 and field effect transistor 20, which serves as a drive circuit, in display device 302. In this figure, organic EL device 350 is arranged laterally to field effect transistor 20 on the same base. In addition, the field-effect transistor and the capacitor (not shown) are also arranged on the same basis.
[000261] The provision of a protective layer over the active layer 22 is adequate, which is not shown in FIG. 8. For example, SiO2, SiNx, Al2O3, or fluoropolymers can be appropriately used as the protective layer material.
[000262] Alternatively, the organic EL device 350 can be deposited onto the field effect transistor 20 as shown in FIG. 9. In this case, the gate electrode 26 is required to be transparent, and therefore transparent electrically conductive oxides are used as the material of gate electrode 26 such as ITO, In2O3, SnO2, ZnO, ZnO containing Ga, ZnO containing Al and SnO2 containing Sb. Notably, reference numeral 360 denotes an interlayer insulation film (planar film). The interlayer insulation film material includes resins such as polyimide resins and acrylic resins.
[000263] FIG. 10 is a schematic view of an example organic EL device.
[000264] In FIG. 10, the organic EL 350 device includes a negative electrode 312, a positive electrode 314, and a thin film layer of organic EL 340.
[000265] The material of negative electrode 312 is not particularly limited and can be selected appropriately depending on the intended purpose. Examples thereof include aluminum (Al), magnesium alloy (Mg) - silver (Ag), aluminum alloy (Al) - lithium (Li), and ITO (Indium Tin Oxide). Note that the magnesium (Mg) - silver (Ag) alloy results in a very reflective electrode when the Mg - Ag alloy is thick enough.
[000266] Meanwhile, the Mg - Ag alloy results in a semi-transparent electrode when the Mg - Ag alloy is very thin (about less than 20 nm). In this figure, light is removed from the positive electrode side, but light can be removed from the negative electrode side when the negative electrode is transparent or semi-transparent.
[000267] The material of the 314 positive electrode is not particularly limited and can be selected appropriately depending on the intended purpose. Examples thereof include ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), and silver alloy (Ag) - neodymine (Nd). Note that the silver alloy results in a very reflective electrode, which is suitable when light is removed from the negative electrode side.
[000268] The thin film layer of organic EL 340 includes an electron transport layer 342, a light emitting layer 344, and a hole transport layer 346. The electron transport layer 342 is connected with the electrode negative 312, and hole transport layer 346 is connected with positive electrode 314. When a predetermined voltage is applied between positive electrode 314 and negative electrode 312, light emitting layer 344 emits light.
[000269] The electron transport layer 342 and the light emitting layer 344 together can be formed into a layer. An electron injection layer can be provided between the electron injection layer 342 and the negative electrode 312, and a hole transport layer can be additionally provided between the hole transport layer 346 and the positive electrode 314.
[000270] The so-called "bottom emission" type organic EL device in which light is drawn from one side of a substrate has been described, but a "top emission" type organic EL device in which light is drawn from an opposite side to a substrate can also be used.
[000271] FIG. 11 is a schematic structural view of another example of image display apparatus of the present invention.
[000272] In FIG. 11, the image display apparatus includes a plurality of display devices 302, wirings (scan lines, data lines, and power supply lines), and a display control apparatus 400.
[000273] The display control apparatus 400 includes an image data processing circuit 402, and a data line drive circuit 406.
[000274] The image data processing circuit 402 determines the brightness of each of the plurality of display devices 302 in the player based on a signal output from a video output circuit.
[000275] A scan line drive circuit 404 individually applies voltage to the n scan lines in response to an instruction from the image data processing circuit 402.
[000276] Data line drive circuit 406 individually applies voltage to m data lines in response to an instruction from image data processing circuit 402.
[000277] The modality in the case where a light control device is an organic EL device has been described, but is not limited to this. For example, the light control device could be an electrochromic device. In this case, the exhibitor is an electrochromic exhibitor.
[000278] Additionally, the light control device may be a liquid crystal device, in this case the display is a liquid crystal display, and no power supply line for the 302' display device is required to be used, illustrated in FIG. 12. As illustrated in FIG. 13, the drive circuit 320' can be constituted by a field effect transistor 40 corresponding to the field effect transistor 10 and 20. In the field effect transistor 40, a gate electrode G is connected with a line of predetermined scan, and an S supply electrode is connected with a predetermined data line. A drain electrode D is connected with capacitor 361 and a pixel electrode of a liquid crystal device 370.
[000279] The light control device can be an electrophoresis device, an organic EL device or an electrowetting device.
[000280] The modality in the case where a system of the present invention is a television set has been described, but is not limited thereto. The system can be any system that has an image display apparatus such as a device that displays image and information. For example, the system can be a computer system in which a computer, including a personal computer, is connected with an image display apparatus.
[000281] The system of the present invention can operate stably for a long period as it includes the image display apparatus of the present invention. Examples
[000282] Examples of the present invention will be explained here below, but these examples should not be interpreted as limiting the scope of the present invention. (Examples 1 to 11) <Production of xMgO.yCu20 (amorphous) oxide semiconductor>
[000283] A solution of magnesium 2-ethylhexanoate (3.0% by mass) in toluene was mixed with a solution of copper neodecanoate (8.28% by mass) in toluene, followed by dissolution with toluene to obtain an xMgO.yCu2O oxide semiconductor paint. A ratio of the solution of magnesium 2-ethylhexanoate (3.0% by mass) in toluene to the solution of copper neodecanoate (8.28% by mass) in toluene was adjusted so that a molar ratio of Mg to Cu in the mixed solution can be x:2y.
[000284] Then, the ink for the xMgO.yCu2O oxide semiconductor was spin coated on a glass base, dried for 1 hour at 120°C, and calcined for 3 hours at 250°C while being irradiated with a lamp of excimer (wavelength: 222 nm) under oxygen stream to form a film of xMgO.yCu2O.
[000285] Table 1 below summarizes each incorporated amount of the solution of magnesium 2-ethylhexanoate (3.0% by mass) in toluene and the solution of copper neodecanoate (8.28% by mass) in toluene as well. as the values of "x" and "y," and the thickness of the resulting xMgO.yCu2O oxide semiconductor. Table 1

[000286] In the table above, E denotes a "power of ten." For example, "1.0 E-05" means "0.00001," and "1.0 E+02" means "100." (Examples 12 to 22) <Production of xCaO.yCu2O (amorphous) oxide semiconductor>
[000287] A solution of barium 2-ethylhexanoate (5.0% by mass) in mineral form was mixed with a solution of copper neodecanoate (8.28% by mass) in toluene, followed by dissolution with toluene to get an xCaO.yCu2O oxide semiconductor paint. A ratio of the solution of barium 2-ethylhexanoate (5.0% by mass) in mineral form to the solution of copper neodecanoate (8.28% by mass) in toluene was adjusted so that a molar ratio of Ca for Cu in the mixed solution can be x:2y.
[000288] Then, the ink for the xCaO-yCu2O oxide semiconductor was spin coated on a glass base, dried for 1 hour at 120°C, and calcined for 3 hours at 250°C while being irradiated with a excimer lamp (wavelength: 222 nm) under oxygen current to form a film of xCaO.yCu2O.
[000289] Table 2 below summarizes each incorporated amount of the solution of barium 2-ethylhexanoate (5.0% by mass) in mineral form and the solution of copper neodecanoate (8.28% by mass) in toluene, as well as the values of "x" and "y," and the thickness of the resulting xCaO.yCu2O oxide semiconductor. Table 2

[000290] In the table above, E denotes a "power of ten." For example, "1.0 E-05" means "0.00001," and "1.0 E+02" means "100." (Examples 23 to 34) <Production of xSrO.yCu2O (amorphous) oxide semiconductor>
[000291] A solution of strontium 2-ethylhexanoate (2.0% by mass) in toluene was mixed with a solution of copper neodecanoate (8.28% by mass) in toluene, followed by dissolution with toluene to obtain an xSrO.yCu2O oxide semiconductor paint. A ratio of the solution of strontium 2-ethylhexanoate (2.0% by mass) in toluene to the solution of copper neodecanoate (8.28% by mass) in toluene was adjusted so that a molar ratio of Sr to Cu in the mixed solution can be x:2y.
[000292] Then the xSrO.yCu2O oxide semiconductor paint was spin coated on a glass base, dried for 1 hour at 120°C, and calcined for 3 hours at 250°C while being irradiated with a lamp of excimer (wavelength: 222 nm) under oxygen stream to form a film of xSrO.yCu2O.
[000293] Table 3 below summarizes each incorporated amount of the strontium 2-ethylhexanoate solution (2.0% by mass) in toluene and the copper neodecanoate solution (8.28% by mass) in toluene as well. as the values of "x" and "y," and the thickness of the resulting xSrO.yCu2O oxide semiconductor. Table 3


[000294] In the table above, E denotes a "power of ten." For example, "1.0 E-05" means "0.00001," and "1.0 E+02" means "100." (Examples 35 to 44) <XBaO.yCu2O (amorphous) oxide semiconductor production>
[000295] A solution of barium 2-ethylhexanoate (8.0% by mass) in toluene was mixed with a solution of copper neodecanoate (8.28% by mass) in toluene, followed by dissolution with toluene to obtain an xBaO.yCu2O oxide semiconductor paint. A ratio of the solution of barium 2-ethylhexanoate (8.0% by mass) in toluene to the solution of copper neodecanoate (8.28% by mass) in toluene was adjusted so that a molar ratio of Ba to Cu in the mixed solution can be x:2y.
[000296] Then the xBaO.yCu2O oxide semiconductor paint was spin coated on a glass base, dried for 1 hour at 120°C, and calcined for 3 hours at 250°C while being irradiated with a lamp of excimer (wavelength: 222 nm) under oxygen current to form a film of xBaO.yCu2O.
[000297] Table 4 below summarizes each incorporated amount of the solution of barium 2-ethylhexanoate (8.0% by mass) in toluene and the solution of copper neodecanoate (8.28% by mass) in toluene as well. as the values of "x" and "y," and the thickness of the resulting xBaO.yCu2O oxide semiconductor. Table 4

[000298] In the table above, E denotes a "power of ten." For example, "1.0 E-05" means "0.00001," and "1.0 E+02" means "100." (Example 45) <Cu2O oxide semiconductor production (amorphous)>
[000299] A solution of copper neodecanoate (8.28% by mass) in toluene was diluted with toluene to obtain a Cu2O oxide semiconductor paint.
[000300] Then, the Cu2O oxide semiconductor paint was spin coated on a glass base, dried for 1 hour at 120°C, and calcined for 3 hours at 250°C while being irradiated with an excimer lamp (wavelength: 222 nm) under oxygen current to form a Cu2O film.
[000301] Table 5 below shows the thickness of the resulting Cu2O oxide semiconductor. Table 5

[000302] In the table above, E denotes a "power of ten." For example, "1.0 E-05" means "0.00001," and "1.0 E+02" means "100." (Examples 46 to 49) <Production of oxide semiconductor from xAO.yCu2O (amorphous)> (A = two or more elements selected from Mg, Ca, Sr, and Ba)
[000303] A solution of magnesium 2-ethylhexanoate (3.0% by mass) in toluene, a solution of barium 2-ethylhexanoate (5.0% by mass) in mineral form, a solution of 2 -strontium ethylhexanoate (2.0% by mass) in toluene, and a solution of barium 2-ethylhexanoate (8.0% by mass) in toluene were mixed with a solution of copper neodecanoate (8, 28% by mass) in toluene according to the incorporated amounts indicated in Tables 6-1 and 6-2, followed by dissolution with toluene to obtain an xAO.yCu2O oxide semiconductor paint.
[000304] Then the xAO.yCu2O oxide semiconductor paint was spin coated on a glass base, dried for 1 hour at 120°C, and calcined for 3 hours at 250°C while being irradiated with a lamp of excimer (wavelength: 222 nm) under oxygen current to form a film of xAO.yCu2O. In this xAO.yCu2O film, A is composed of two or more elements selected from Mg, Ca, Sr, and Ba. Table 7 summarizes the values of "x" and "y" calculated from the ratio per mole of Cu and the total ratio per mole of Mg, Ca, Sr, and Ba, as well as the percentage of each element that constitutes A that is calculated from the respective percentage of Mg, Ca, Sr, and Ba. Table 7 below also summarizes the thickness of the resultant xAO.yCu2O oxide semiconductor. Table 6-1
Table 6-2


[000305] In the table above, E denotes a "power of ten." For example, "1.0 E-05" means "0.00001," and "1.0 E+02" means "100." Table 7

[000306] In the table above, E denotes a "power of ten." For example, "1.0 E-05" means "0.00001," and "1.0 E+02" means "100." (Comparative Example 1) <Production of Sr-Cu oxide (crystalline)>
[000307] An oxide film with a thickness of 100 nm was formed on a glass base with an RF magnetron sputtering method using sintered SrCu2O2 (diameter: 10.16 cm (4 inches)) as a target. Argon gas and oxygen gas were used as a spray gas. RF magnetron spraying was carried out under the following conditions: total pressure: 1.1 Pa, oxygen concentration: 80%, and RF energy: 100 W. The base temperature was maintained at 300°C with a heater during film formation, and slowly cooled to room temperature at a rate of 2°C per min after film formation. (Comparative Example 2) < Sr-Cu oxide production (crystalline)>
[000308] An oxide film with a thickness of 100 nm was formed on a glass base in the same way as Comparative Example 1, and then heated for 1 hour at 500°C under nitrogen atmosphere. (Evaluation) < X-ray diffraction >
[000309] X-ray diffraction analyzes (X' PertPro; product of Royal Philips Electronics) were performed for each of the Examples. FIGs. 14 to 30 illustrate the results of X-ray diffraction analyzes of samples from Examples 1, 3, 7, 9, 12, 14, 15, 18, 24, 27, 30, 32, 35, 38, 40, 43, and 45, respectively.
[000310] In FIGs. 14 to 30, no diffraction peaks were observed, which confirms that these oxide films were of an amorphous state. Similarly, no diffraction peaks were observed in analyzes performed for other Examples. Therefore, samples from all Examples were found to be amorphous in state.
[000311] In the result of X-ray diffraction analysis for the sample of Comparative Example 1, a plurality of diffraction peaks were observed. The measurement of the diffraction angle (2θ) thereof confirmed that the oxide of Comparative Example 1 was SrCu2O3 crystals.
[000312] In the result of X-ray diffraction analysis for the sample of Comparative Example 2, a diffraction peak was observed at the diffraction angle corresponding to the metal Cu. From the above result, it was found that heat treatment reduced Cu oxide to Cu metal. < Thickness >
[000313] Thickness was determined with Spectral Film Thickness Monitor (FE-3000, product of Otsuka Electronics Co., Ltd.) by analyzing the reflection spectrum over a wavelength range from about 300 nm to about 700 nm. < Volumetric resistivity >
[000314] The volumetric resistivity was measured for oxide films produced in the Examples above. The results are shown in Tables 1 to 5 and 7, and FIGs. 31 to 34. When the sample has a resistivity of 1 x 103 Qcm or less, the volumetric resistivity was measured with the LORESTA GP low resistivity meter (product of Mitsubishi Chemical Analytech Co., Ltd.).
[000315] Meanwhile, when the sample has a resistivity of more than 1 x 103 Qcm, the volumetric resistivity was calculated from the PV characteristic between a pair of electrodes which are line-shaped Au electrodes formed in the film of oxide.
[000316] As seen from Tables 1 to 5 and 7, and FIGs. 31 to 34, all samples from the Examples above exhibit electrical conductivity. In addition, it has been found that the volumetric resistivity tends to increase as the value of x increases, and the volumetric resistivity is varied over a very large range from about 1 Qcm to about 1011 Qcm.
[000317] The p-type oxide film of the present invention can be used for various semiconductor devices, but a property which semiconductors in devices requires (ie resistivity) in general varies depending on the type and property of the semiconductor devices. Appropriately, the value of x can be properly selected depending on the intended purpose, provided that when the volumetric resistivity film of the oxide is more than 108 Qcm, an ohmic contact cannot be easily formed through connection with an electrode. , which is practically not preferred. So that the volumetric resistivity is 108 Qcm or less, in the case of xMgO.yCu2 0, x is preferably less than 80. In the case of xCaO.yCu2O, x is preferably less than 85. In the case of xSrO.yCu2O, x is preferably less than 85. In the case of xBaO.yCu2O, x is preferably less than 75.
[000318] The I-V characteristic was also determined for samples of Comparative Examples 1 and 2 in the same way as in the Examples. That is, a pair of electrodes that are line-shaped Au electrodes were formed on the oxide film, and then the I-V characteristic between the electrodes was measured. It was found that the SrCu2O3 crystals of Comparative Example 1 exhibit no linear I-V characteristic and have the volumetric resistivity of 1012 Qcm or more. This result suggests that the p-type electrical conductivity was not exhibited as Cu was divalent in the SrCu2O3 crystals. The volumetric resistivity of the sample from Comparative Example 2 was found to be 3 x 107 Qcm. This suggests that heat treatment decreased resistivity. In fact, the decrease was due to Cu metal production. That is, the p-type electrical conductivity cannot be controlled in the crystalline oxide of Sr-Cu. (Example 50) - Production of p-n junction diode > - Preparation of the base -
[000319] A non-alkaline glass base (thickness: 0.7 mm) was used as a base. The glass base was ultrasonically cleaned with a neutral detergent, purified water, and isopropyl alcohol. After drying, the base was further treated with UV ozone for 10 min at 90°C. - Formation of the cathode electrode -
[000320] A cathode electrode was formed by deposition of Al through a metal mask to the glass base in order to have 100 nm thickness. - Formation of the n-type semiconductor layer -
[000321] An oxide film based on Mg - In was formed with a method of high frequency spraying through a metal mask to the cathode electrode. As a target, sintered polycrystals of which the composition was In2MgO4 (diameter: 10.16 cm (4 inches)) were used. The final vacuum within a spray chamber was 2 x 10-5 Pa. The flow rates of argon gas and oxygen gas during spraying were adjusted so that the total pressure was 1.0 Pa and the partial pressure of oxygen was 6.0 x 10-2 Pa. Base temperature was not controlled during spraying. An oxide film based on Mg - In having a thickness of 160 nm was formed with the spray energy of 150 W and the spray time of 15 min. - Formation of the p-type semiconductor layer -
[000322] A 41MgO.59Cu2O film having a thickness of 109 nm was formed on the n-type semiconductor layer in the same manner as in Example 5. - Formation of the anode electrode -
[000323] An anode electrode was formed by deposition of Al through a metal mask in the p-type semiconductor layer so as to be 100 nm thick.
[000324] As above, a p-n junction diode was produced. <Assessment>
[000325] A diode from Example 50 was determined for the I-V characteristic. The result is shown in FIG. 35. The typical straightening curve was observed.
[000326] That is, it was found that the p-n junction diode can be obtained using the p-type oxide of the present invention as the active layer. (Example 51) - Field effect transistor production > - Base preparation (gate electrode, gate insulation layer) -
[000327] A Si base with thermal oxide film (thickness: 200 nm) was used as a base. The Si base was ultrasonically cleaned with a neutral detergent, purified water, and isopropyl alcohol. After drying, the base was further treated with UV ozone for 10 min at 90°C. In this case, the thermal oxide film served as a door insulation layer, and the Si base served as a door electrode. - Formation of the active layer -
[000328] The paint for the 9MgO-91Cu2O oxide semiconductor prepared in Example 1 was spin coated on the Si base, dried for 1 hour at 120°C, and calcined for 3 hours at 250°C while being irradiated with an excimer lamp (wavelength: 222 nm) under oxygen stream to form a 9MgO-91Cu2O film having an average thickness of 71 nm.
[000329] After this, an active layer was formed by applying a photoresistor to the film, followed by pre-baking, exposure with an exposure device, and developing the resulting film coated with the photoresistor to form a resistor pattern that matches to that of the active layer to be formed. In addition, the 9MgO-91Cu2O film that exists in an area where the resistor pattern was not formed was removed by a wet etching process, and then the resistor pattern was also removed to form the active layer. - Formation of supply electrode and drain electrode -
[000330] A supply electrode and a drain electrode were formed by deposition of 1 nm thick Cr and 100 nm thick Al in this order through a metal mask on the active layer. The length and width of a channel were 50 µm and 0.4 mm, respectively.
[000331] Finally, the resulting supply electrode and drain electrode were annealed for 1 hour at 300°C under oxygen current to obtain a field effect transistor. <Assessment>
[000332] The field effect transistor produced in Example 51 was determined for the transfer characteristic (Vds = -20 V) and found to be a normally off type field effect transistor that exhibits excellent p-type transistor property . (Comparative Example 3)
<Field Effect Transistor Production>
[000333] A field effect transistor was produced in the same manner as Example 51 except that an active layer was formed as follows: - Formation of the active layer -
[000334] A crystalline SrCu2O3 film having an average thickness of 65 nm was formed in the same manner as Comparative Example 1.
[000335] After this, the active layer was formed by applying a photoresistor to the film, followed by pre-baking, exposure with an exposure device, and developing the resulting film coated with the photoresistor to form a resistor pattern that corresponds to that of the active layer to be formed. In addition, the SrCu2O3 film that exists in an area where the resistor pattern was not formed was removed by a wet etching process, and then the resistor pattern was also removed to form the active layer. <Assessment>
[000336] The field effect transistor of Comparative Example 3 was determined for the transfer characteristic (Vds = -20 V) and found that the active layer has too high resistance to exhibit the transistor characteristic. (Example 52) <Field Effect Transistor Production> - Preparation of the base (door electrode, metal insulation layer) -
[000337] A Si base with thermal oxide film (thickness: 200 mm) was used as a base. The Si base was ultrasonically cleaned with a neutral detergent, purified water, and isopropyl alcohol. After drying, the base was further treated with UV ozone for 10 min at 90°C. In this case, the thermal oxide film served as a door insulation layer, and the Si base served as a door electrode. - Formation of supply electrode and drain electrode -
[000338] HMDS (hexamethyldisilazane) was spin coated on the Si base with thermal oxide film and dried. The resulting base surface was subjected to hydrophobization. Then, for a lifting process, an underlying resistor layer was formed through a spin drying and coating process. In addition, a photosensitive photoresistor layer was formed over the underlying resistor layer through a spin coating and drying process.
[000339] The resulting laminate was standardized by exposure through a photomask and development before forming a layer made of electrode material, Pt, with a method of spraying DC onto the laminate. As a target, Pt (diameter: 10.16 cm (4 inches)) was used. The final vacuum within a spray chamber was 1 x 10-3 Pa. Through spraying, the pressure was adjusted to 0.35 Pa using argon gas stream. Base temperature was not controlled during spraying. A Pt film having a thickness of 50 nm was formed with the spray energy of DC 200 W and the spray time of 6 min and 15 seconds.
[000340] Then, the base with the Pt film was immersed in N-methylpyrrolidone to remove unwanted areas of the Pt film along with the resistor to thus obtain a Pt supply electrode and a Pt drain electrode both having the desired shapes. - Preparation of semiconductor ink for inkjet printing -
[000341] Copper nitrate trihydrate (2.42 g, equivalent to 10 mmol) was dissolved in 2-methoxyethanol (10 mL) to produce a crude copper solution. Magnesium nitrate hexahydrate (2.56 g, equivalent to 10 mmol) was dissolved in 2-methoxyethanol (10 mL) to produce a crude magnesium solution.
[000342] Ethylene glycol (24 mL) was mixed with 2-methoxyethanol (12 mL), the crude copper solution (10 mL), and the crude magnesium solution (2 mL), and the resulting mixture was stirred to produce a semiconductor ink for inkjet printing. The molar ratio of Cu to Mg in the ink was 5:1. This paint had a composition of 29MgO.71Cu2O, and is therefore referred to as "29MgO-71Cu2O semiconductor paint." - Formation of the active layer -
[000343] Semiconductor ink of 29MgO.71Cu2O was applied with an inkjet printing apparatus to the desired areas in the base where the supply and drain electrodes were formed. The resulting paint coated base was dried for 1 hour at 120°C, and calcined for 3 hours at 250°C while being irradiated with an excimer lamp (wavelength: 222 nm) to form a 29MgO film. 71Cu2O having a thickness of 44 nm.
[000344] Finally, the resultant was annealed for 1 hour at 300°C to obtain a field effect transistor.
[000345] FIG. 36 is the photomicrograph of the channel portion of the field effect transistor. The distance between the supply electrode 23 and the drain electrode 24 is referred to as the channel length, which is 50 µm in this case. The channel width is defined by the width of active layer 22 which is applied in a vertical line. In this photomicrograph, the field effect transistor has a channel width of 36 µm. <Assessment>
[000346] First, in order to evaluate the resistivity of the semiconductor film resulting from 29MgO.71Cu2O, the current value between the supply electrode and the drain electrode was measured under the following conditions: 1) no voltage was applied to the electrode of door; 2) a voltage of 20 V was applied to the source electrode; and 3) the drain electrode was grounded. The current value was found to be 2.85 µA. The volumetric resistivity of the semiconductor film of 29MgO.71Cu2O was calculated from the above current value to be 22.2 Qcm. On the other hand, the volumetric resistivity of the 29MgO.71Cu2O semiconductor film of Example 3 was calculated to be 31.1 Qcm. The finished 29MgO.71Cu2O semiconductor film of Examples 3 was confirmed to have similar resistivity to that of Example 52 regardless of the type of paint raw material (the solvent, the Cu-containing compound and the Mg-containing compound) and the paint application method.
[000347] Next, the field effect transistor of Example 52 was determined for the transfer characteristic (Vds = -20 V) and found to be a normally off type transistor that exhibits excellent p-type transistor property. In Example 51, the 9MgO.91Cu2O semiconductor film was formed through a spin coating process before being made to a desired shape with a wet etch process. Meanwhile, in Example 52, the 29MgO.71Cu2O semiconductor film was formed only in the desired areas with an inkjet printing method, which subsequently eliminated a standardization step to thereby allow a field effect transistor to be produced more easily. Industrial Applicability
[000348] The p-type oxide of the present invention can exhibit excellent property, that is, sufficient electrical conductivity, can be produced at relatively low temperature and under practical conditions, and can be controlled in electrical conductivity by adjusting its composition ratio . Therefore, the p-type oxide can be suitably used for an active layer of a semiconductor device such as a diode and a field-effect transistor. List of Reference Signals 1 base 2 cathode 3 n-type semiconductor layer 4 p-type semiconductor layer 5 anode 6 pn junction diode 10 field effect transistor 20 field effect transistor 21 base 22 active layer 23 electrode supply 24 drain electrode 25 gate insulation layer 26 gate electrode 30 capacitor 40 field effect transistor 302, 302' display device 310 display 312 negative electrode 314 positive electrode 320, 320' drive circuit 340 thin film layer of organic EL 342 electron transport layer 344 light emitting layer 346 hole transport layer 350 organic EL device 360 interlayer insulation film 361 capacitor 370 liquid crystal device 400 display control device 402 data processing circuit 404 scan line drive circuit 406 data line drive circuit

权利要求:
Claims (11)
[0001]
1. P-type oxide characterized by the fact that the p-type oxide is amorphous and is represented by the following composition formula: xAO.yCu2O where x denotes a ratio per mole of AO and y denotes a ratio per mole of CU2O and x and y satisfy the following expressions: 0 < x < 100 and x + y = 100, and A is either Mg, Ca, Sr and Ba, or a mixture containing at least one selected from the group consisting of Mg, Ca, Sr and Ba.
[0002]
2. Composition for the production of type p oxide characterized by the fact that it comprises: a solvent; a compound that contains Cu; and a compound containing at least one selected from the group consisting of Mg, Ca, Sr and Ba, wherein the composition for producing the p-type oxide is designed to produce the p-type oxide as defined in claim 1.
[0003]
3. Method for producing the p-type oxide as defined in claim 1 characterized in that it comprises: applying a composition on a support; and heat treating the composition after application, wherein the composition comprises a solvent, a Cu-containing compound, and a compound containing at least one selected from the group consisting of Mg, Ca, Sr and Ba.
[0004]
4. Semiconductor device characterized in that it comprises: an active layer, wherein the active layer comprises the p-type oxide as defined in claim 1.
[0005]
5. Semiconductor device according to claim 4, characterized in that it additionally comprises: a first electrode; and a second electrode, where the semiconductor device is a diode where the active layer is formed between the first electrode and the second electrode.
[0006]
6. Semiconductor device according to claim 4, characterized in that it additionally comprises: a gate electrode; a supply electrode and a drain electrode; and a gate insulation layer, wherein the semiconductor device is a field effect transistor where the active layer is formed between the supply electrode and the drain electrode, and the gate insulation layer is formed between the supply electrode. port and the active layer.
[0007]
7. Display device characterized in that it comprises: a light control device configured to control the light output based on a trigger signal; and a drive circuit containing the semiconductor device as defined in claim 4 and configured to drive the light control device.
[0008]
8. Display device according to claim 7, characterized in that the light control device comprises an organic electroluminescence device or an electrochromic device.
[0009]
9. Display device according to claim 7, characterized in that the light control device comprises a liquid crystal device, an electrophoretic device or an electro-wetting device.
[0010]
10. Image display apparatus characterized in that it comprises: a plurality of display devices as defined in claim 7 which are arranged in a matrix form and each contain a field effect transistor; a plurality of wires configured to individually apply gate voltage and signal voltage to the field-effect transistor of the display devices; and a display control apparatus configured to individually control the gate voltage and the signal voltage in the field effect transistor across the wires based on the image data, wherein the image display apparatus is configured to display an image based on the image data.
[0011]
11. System characterized in that it comprises: the image display apparatus as defined in claim 10; and an image data generating apparatus configured to generate image data based on the image information to be displayed, and output the image data to the image display apparatus.

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同族专利:

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公开号 | 公开日

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CN103460389B|2017-08-11|

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WO2012133915A1|2012-10-04|

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BR112013025260B8|2022-01-25|

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US10923569B2|2021-02-16|

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KR102045364B1|2019-11-15|

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EP2691984A1|2014-02-05|

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CN103460389A|2013-12-18|

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KR20180037302A|2018-04-11|

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TWI474977B|2015-03-01|

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JP2012216780A|2012-11-08|

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US20190172914A1|2019-06-06|

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EP2691984A4|2014-09-03|

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US20170345901A1|2017-11-30|

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TW201249748A|2012-12-16|

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KR20130137226A|2013-12-16|

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RU2013148552A|2015-05-10|

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法律状态:
2018-12-18| B06F| Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]|

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2019-12-24| B06U| Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]|

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2021-03-23| B06A| Patent application procedure suspended [chapter 6.1 patent gazette]|

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2021-05-11| B09A| Decision: intention to grant [chapter 9.1 patent gazette]|

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2021-07-06| B16A| Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]|Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 28/03/2012, OBSERVADAS AS CONDICOES LEGAIS. |

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2022-01-25| B16C| Correction of notification of the grant [chapter 16.3 patent gazette]|Free format text: REF. RPI 2635 DE 06/07/2021 QUANTO AO INVENTOR. |

优先权:

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申请号 | 申请日 | 专利标题

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JP2011-080171|2011-03-31|

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JP2011080171|2011-03-31|

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JP2012045666A|JP2012216780A|2011-03-31|2012-03-01|P-type oxide, p-type oxide manufacturing composition, p-type oxide manufacturing method, semiconductor element, display element, image display device and system|

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JP2012-045666|2012-03-01|

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PCT/JP2012/059131|WO2012133915A1|2011-03-31|2012-03-28|P-type oxide, p-type oxide-producing composition, method for producing p-type oxide, semiconductor device, display device, image display apparatus, and system|

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